Samsung Develops Its Own 5G Modem
Samsung has announced the Exynos Modem 5100 for mobile devices with support for the 5G New Radio standard (3GPP release 15) in both sub-6 GHz and mmWave bands. Samsung says the Exynos 5100 is built using a 10nm process. The company claims to have successfully conducted an over-the-air 5G NR test with the modem using a 5G base station. It handles legacy networks, such as 2G GSM/CDMA, 3G WCDMA, HSPA, and LTE along with the 5G standard. Samsung says the modem delivers download speeds up to 2 Gbps in sub-6 GHz settings and 6 Gbps in mmWave settings. The Exynos 5100 is capable of achieving 1.6 Gbps via LTE 4G. Samsung says the Exynos Modem 5100 also includes envelope tracking, radio frequency IC, and power management solutions. It will be available to hardware makers by the end of the year. Phones with integrated 5G are not expected until 2019.
Jul 23, 2018
Qualcomm today announced new antennas that will bring mmWave and sub-6 GHz 5G to mobile devices such as smartphones. The QTM052 mmWave module and QPM5xx sub-6 GHz RF module are compact enough that they are suitable for phones.
Feb 23, 2017
Samsung today announced the Exynos 9 Series 8895 application processor for premium mobile devices. The chip relies on Samsung's 10nm FinFET process with 3D transistors.
Nov 10, 2017
Samsung updated its Exynos 9 Series processor and also debuted a fresh camera sensor for smartphones. The Exynos 9 Series 9810 is a flagship-class application processor built on Samsung's second-generation 10nm FinFET process.
Oct 23, 2018
Qualcomm has announced a number of achievements and updates in its work developing 5G NR technologies. First and foremost, the company revealed the second wave of QTM052 mmWave antenna modules with 5G NR specifically for smartphones and other mobile devices.
Apr 20, 2017
Samsung this week said it has finished testing its second-generation 10nm FinFET process and is ready to produce the silicon in volume. The 10LPP (Low Power Plus) technology, used in conjunction with 3D transistors, improves speeds by about 10%, or power efficiency by about 15% when compared to the first-generation 10nm process.