Samsung Starts Producing Next-Gen Memory Chips
Today Samsung announced that it has begun production of its of 3-bit, multi-level-cell (MLC) NAND flash chips using 30-nanometer process technology. The new 3-bit chips increase the efficiency by 50% over the previous generation 2-bit chips. This will lead the greater capacities in flash-based storage, with the first chips offering 8GB. Samsung notes that 16GB and 32GB will follow, and can be used in USB drives and microSD cards for devices such as mobile phones. Samsung also commenced production of its 30-nanometer, 32GB, MLC NAND memory with an asynchronous DDR (double data rate) interface. This set of chips has a much faster read rate than previous generations and can push information at 133Mbps. Samsung notes that these chips will be ideal for storing video for playback in devices such as smartphones.
Samsung Shows Off First UFS Memory Cards
Samsung today announced a range of Universal Flash Storage memory cards meant for today's intense video applications. The UFS spec has been used for embedded memory modules since 2015, but this is the first time UFS has appeared in removable memory cards.
Samsung Making 256 GB Storage Chips for Phones
Samsung has begun manufacturing memory modules that offer as much as 256 GB of storage. The new embedded memory chips use Universal Flash Storage 2.0.
Samsung Reveals 6GB High-Speed RAM Chips
Samsung is preparing 6GB memory chips for flagship smartphones and tablets. Samsung today announced it has begun production of 12-gigabit, low power double data rate 4 mobile DRAM based on its 20nm processes.
Samsung Shows Off 128GB Embedded Flash Module
Samsung today announced that it is producing embedded memory modules for flagship smartphones using the new Universal Flash Storage (UFS) 2.0 standard. UFS is a generational leap compared to the eMMC standard, which is used widely in mobile devices today.