Samsung Starts Producing Next-Gen Memory Chips
Today Samsung announced that it has begun production of its of 3-bit, multi-level-cell (MLC) NAND flash chips using 30-nanometer process technology. The new 3-bit chips increase the efficiency by 50% over the previous generation 2-bit chips. This will lead the greater capacities in flash-based storage, with the first chips offering 8GB. Samsung notes that 16GB and 32GB will follow, and can be used in USB drives and microSD cards for devices such as mobile phones. Samsung also commenced production of its 30-nanometer, 32GB, MLC NAND memory with an asynchronous DDR (double data rate) interface. This set of chips has a much faster read rate than previous generations and can push information at 133Mbps. Samsung notes that these chips will be ideal for storing video for playback in devices such as smartphones.
New Samsung Chip Enables Phones with 512GB of Storage
Samsung today announced the first part designed for mobile devices that can store 512GB of data. The solution effectively doubles the amount of internal storage a high-end phone can ship with.
Samsung Shows Off First UFS Memory Cards
Samsung today announced a range of Universal Flash Storage memory cards meant for today's intense video applications. The UFS spec has been used for embedded memory modules since 2015, but this is the first time UFS has appeared in removable memory cards.
Samsung Making 256 GB Storage Chips for Phones
Samsung has begun manufacturing memory modules that offer as much as 256 GB of storage. The new embedded memory chips use Universal Flash Storage 2.0.
Samsung's Exynos 9810 Processor Latest Chip to Include Artificial Intelligence
Samsung today announced the Exynos 9810, its flagship processor for the year, a chip that will likely form the heart of the company's Galaxy S series devices in a few months. The 9810 is built on Samsung's second-generation 10-nanometer FinFET process, which gives it a bump in speed and efficiency.