Samsung Starts Producing Next-Gen Memory Chips
Today Samsung announced that it has begun production of its of 3-bit, multi-level-cell (MLC) NAND flash chips using 30-nanometer process technology. The new 3-bit chips increase the efficiency by 50% over the previous generation 2-bit chips. This will lead the greater capacities in flash-based storage, with the first chips offering 8GB. Samsung notes that 16GB and 32GB will follow, and can be used in USB drives and microSD cards for devices such as mobile phones. Samsung also commenced production of its 30-nanometer, 32GB, MLC NAND memory with an asynchronous DDR (double data rate) interface. This set of chips has a much faster read rate than previous generations and can push information at 133Mbps. Samsung notes that these chips will be ideal for storing video for playback in devices such as smartphones.